Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Author:

Maeda Takuya1ORCID,Wakamoto Yusuke1ORCID,Kaneki Shota2ORCID,Fujikura Hajime2ORCID,Kobayashi Atsushi3ORCID

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1, Hongo, Bunkyo, Tokyo 113-8656, Japan

2. Sumitomo Chemical Co. Ltd. 2 , Hitachi 319-1418, Japan

3. Department of Materials Science and Technology, Tokyo University of Science 3 , Tokyo 125-8585, Japan

Abstract

Three scandium aluminum nitride (ScAlN) thin films with different Sc compositions of 6%, 10%, and 14% were heteroepitaxially grown on n-type GaN bulk substrates by a low-temperature sputtering method. Atomically flat and smooth surfaces were observed by atomic force microscopy. The ScAlN films were coherently grown on GaN, and the c-axis lattice constants increased with increase in the Sc composition, confirmed by x-ray diffraction. The refractive index and the extinction coefficient of ScAlN were extracted by variable angle spectroscopic ellipsometry. The refractive index slightly increased and the extinction coefficient showed red shift with increase in the Sc composition. The optical bandgap of the ScAlN films was also extracted, which slightly shrunk with increase in the Sc composition.

Funder

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Publisher

AIP Publishing

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