Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=12/a=121004/pdf
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1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
2. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
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4. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
5. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
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