Impact ionization coefficients and critical electric field in GaN-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Impact ionization coefficients and critical electric field in GaN

Published:2021-05-14 Issue:18 Volume:129 Page:185702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maeda Takuya¹^ORCID,Narita Tetsuo²^ORCID,Yamada Shinji³⁴⁵^ORCID,Kachi Tetsu³^ORCID,Kimoto Tsunenobu¹^ORCID,Horita Masahiro¹³⁴^ORCID,Suda Jun¹³⁴^ORCID

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

2. Toyota Central R&D Labs, Inc., Nagakute, Aichi 480-1118, Japan

3. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan

4. Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

5. ULVAC Inc., Chigasaki, Kanagawa 253-8543, Japan

Funder

NEDO

MEXT

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0050793

Reference81 articles.

1. Recent progress of GaN power devices for automotive applications

2. GaN transistors on Si for switching and high-frequency applications

3. Vertical Power p-n Diodes Based on Bulk GaN

4. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

5. Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Cited by 69 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

2. Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation;IEEE Transactions on Electron Devices;2024-09

3. Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor;Applied Physics Letters;2024-08-05

4. Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack;physica status solidi (RRL) – Rapid Research Letters;2024-07-09

5. Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates;physica status solidi (a);2024-06-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3