Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1475-1305.2009.00730.x/fullpdf
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3. Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates;Nakamura;J. Cryst. Growth,2007
4. MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate;Wang;J. Cryst. Growth,2007
5. Scattering of electrons at threading dislocations in GaN;Weimann;J. Appl. Phys.,1998
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