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MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

  • Published:2007-01 Issue: Volume:298 Page:791-793
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Wang Xiaoliang,Wang Cuimei,Hu Guoxin,Xiao Hongling,Fang Cebao,Wang Junxi,Ran Junxue,Li Jianping,Li Jinmin,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in GaN‐Based Power HEMT Devices;Advanced Electronic Materials;2021-01-29

2. Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2020-07-25

3. Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures;Journal of Applied Physics;2020-05-21

4. Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation;REVIEWS ON ADVANCED MATERIALS SCIENCE;2018-06-01

5. Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications;Journal of Nanoelectronics and Optoelectronics;2018-03-01
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