Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Author:
Affiliation:
1. INATECH, Department of Power Electronics, Albert-Ludwigs University Freiburg, Emmy-Noether Straße 2, 79110 Freiburg, Germany
2. Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0003095
Reference36 articles.
1. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
2. Piezoelectric coefficients and spontaneous polarization of ScAlN
3. Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
4. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
5. Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
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