Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE-Reference-Cited by-同舟云学术

Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE

Published:2019-05-22 Issue:SC Volume:58 Page:SC1045
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Frei Kathrin,Trejo-Hernández Raúl,Schütt Sebastian,Kirste Lutz,Prescher Mario,Aidam Rolf,Müller Stefan,Waltereit Patrick,Ambacher Oliver,Fiederle Michael

Funder

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab124f/pdf

Reference37 articles.

1. Fabrication and UV photoresponse of GaN nanowire-film hybrid films on sapphire substrates by chemical vapor deposition method

2. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

3. Single-Chip Multiple-Frequency ALN MEMS Filters Based on Contour-Mode Piezoelectric Resonators

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