X-ray diffraction studies of residual strain in AlN/sapphire templates
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics,Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Reference38 articles.
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3. 222-282 Nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire;Hirayama;Phys. Status Solidi A,2009
4. Strain in GaN thin films and heterostructures;Kisielowski;Semicond. Semimet.,1999
5. Thermal expansion of gallium nitride;Leszczynski;J. Appl. Phys.,1994
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