Strain in GaN Thin Films and Heterostructures
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Publisher
Elsevier
Reference77 articles.
1. On the stress dependence of the dislocation velocity in silicon
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride
5. Elastic constants of III - V compound semiconductors: modification of Keyes' relation
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