Modeling and Design of Low Threshold Voltage D-mode GaN HEMT
Author:
Affiliation:
1. UMass,Advanced Electronic Technology Center,Lowell,MA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9826869/9826902/09826934.pdf?arnumber=9826934
Reference22 articles.
1. Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
2. Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
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4. Process costing of microchip;gajera;Graduate Theses Dissertations and Problem Reports,2006
5. Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN FETs);strydom;EPC Corporation Application Note AN003,2017
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1. Terahertz communication: detection and signal processing;Nanotechnology;2024-06-12
2. The ESD Behavior of D-Mode GaN MIS-HEMT;IEEE Transactions on Electron Devices;2023-12
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