High-Speed Epitaxial Growth of β-SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition
Author:
Affiliation:
1. Institute for Materials Research; Tohoku University; 2-1-1 Katahira; Aoba-ku; Sendai; 980-8577; Japan
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2012.05354.x/fullpdf
Reference21 articles.
1. Silicon Carbide as a Platform for Power Electronics;Eddy;Science,2009
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3. Low-Temperature Growth of High Quality AlN Films on Carbon Face 6H-SiC;Kim;Phys. Status Solidi Lett.,2008
4. Pendeo-Expitaxial Growth of Thin Films of Gallium Nitride and Related Materials and Their Characterization;Davis;J. Cryst. Growth,2001
5. Characterization of MOVPE InN Films Grown on 3c-SiC/Si(111) Templates;Cho;Phys. Status Solidi C,2007
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