Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer-Reference-Cited by-同舟云学术

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Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer

Published:2009-12-01 Issue:1 Volume:10 Page:36-39
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lien Wei-Cheng¹²,Ferralis Nicola²,Carraro Carlo¹³²,Maboudian Roya¹³²

Affiliation:

1. Berkeley Sensor & Actuator Center, University of California, California 94720

2. Department of Chemical Engineering, University of California, Berkeley, California 94720

3. INM-Leibniz Institute for New Materials, Campus D2 2, 66125 Saarbruecken, Germany

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg901189k

Reference28 articles.

1. Saddow, S. E.; Agarwal, A.InAdvances in Silicon Carbide Processing and Applications;Artech House Publishers:Boston, 2004; Chapter 1, pp1−4.

2. SiC MEMS: opportunities and challenges for applications in harsh environments

3. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

4. High temperature electronics using SiC: actual situation and unsolved problems

5. Silicon carbide MEMS for harsh environments

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