Observation of the Initial Stage of 3C-SiC Heteroepitaxial Growth on the Si Nanomembrane-Reference-Cited by-同舟云学术

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Observation of the Initial Stage of 3C-SiC Heteroepitaxial Growth on the Si Nanomembrane

Published:2022-01-24 Issue:2 Volume:22 Page:1421-1426
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kim Kangsik¹^ORCID,Son Seungwoo¹²^ORCID,Lee Seonwoo³,Ahn Jong-Hyun³^ORCID,Lee Zonghoon¹²^ORCID

Affiliation:

1. Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

2. Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

3. School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea

Funder

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01372

Reference33 articles.

1. Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets

2. Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition

3. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail

4. High-Temperature Single-Crystal 3C-SiC Capacitive Pressure Sensor

5. Single-crystal 3C-SiC-on-insulator platform for integrated quantum photonics

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