Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Progress and prospects of group-III nitride semiconductors
3. Transient electron transport in wurtzite GaN, InN, and AlN
4. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
5. MOVPE InN on a 3c‐SiC/Si(111) template formed by C + ‐ion implantation into Si(111)
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1. High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-10-23
2. Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition;Journal of the Korean Ceramic Society;2016-11-30
3. Effect of Pressure on Microstructure of <111>-Oriented β-SiC Films: Research via Electron Backscatter Diffraction;Journal of the American Ceramic Society;2015-08-28
4. Growth Mechanism and Defects of <111>-Oriented β-SiC Films Deposited by Laser Chemical Vapor Deposition;Journal of the American Ceramic Society;2014-09-24
5. Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD;Key Engineering Materials;2014-06
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