Growth Mechanism and Defects of <111>-Oriented β-SiC Films Deposited by Laser Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Growth Mechanism and Defects of <111>-Oriented β-SiC Films Deposited by Laser Chemical Vapor Deposition

Published:2014-09-24 Issue:1 Volume:98 Page:236-241
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Zhang Song¹²,Xu Qingfang¹,Tu Rong¹²,Goto Takashi²,Zhang Lianmeng¹

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; 122 Luoshi Road Wuhan 430070 China

2. Institute for Materials Research; Tohoku University; 2-1-1 Katahira Aoba-ku Sendai 980-8577 Japan

Funder

National Natural Science Foundation of China

111 Project

Global COE program of Materials Integration

Ministry of Education, Culture, Sports, Science and Technology

Japan Grant-in-Aid for Scientific Research

Fundamental Research Funds for the Central Universities, China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13248/fullpdf

Reference37 articles.

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2. Densification of Silicon Carbide Using oxy-Nitride Additives for Space-Based Telescope Mirror Applications;Kumar;Opt. Eng.,2011

3. Epitaxial Growth of 3C-SiC Films on 4 in. Diam (100) Silicon Wafer by Atmospheric Pressure Chemical Vapor Deposition;Zorman;J. Appl. Phys.,1995

4. 3C-SiC Hetero-Epitaxial Growth on Undulant Si(001) Substrate;Nagasawa;J. Cryst. Growth,2002

5. Production of Large-Area Single-Crystal Wafer of Cubic SiC for Semiconductor Devices;Nishino;Appl. Phys. Lett.,1983

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