3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth and Properties of β‐SiC Single Crystals
2. High-field transport in wide-band-gap semiconductors
3. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
4. Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD
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