Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference51 articles.
1. From thin film to bulk 3C-SiC growth: understanding the mechanism of defects reduction;La Via;Mater. Sci. Semiconduct. Process.,2018
2. SiC photoelectrodes for a self-driven water-splitting cell;Yasuda;Appl. Phys. Lett.,2012
3. Epitaxial p-type SiC as a self-driven photocathode for water splitting;Kato;Int. J. Hydrog. Energy,2014
4. XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting;Ma;J. Phys. D Appl. Phys.,2012
5. High-efficiency electrochemical hydrogen evolution based on surface autocatalytic effect of ultrathin 3C-SiC nanocrystals;He;Nano Lett.,2012
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