Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359745
Reference7 articles.
1. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films
2. High‐voltage 6H‐SiCp‐njunction diodes
3. Mechanical properties of 3C silicon carbide
4. Characterization of n-type beta -SiC as a piezoresistor
5. Characterization of the buffer layer in SiC heteroepitaxy
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