Characterization of the buffer layer in SiC heteroepitaxy-Reference-Cited by-同舟云学术

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Characterization of the buffer layer in SiC heteroepitaxy

Published:1993-08 Issue:4 Volume:68 Page:461-466
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bécourt N.,Cros B.,Ponthenier J.L.,Berjoan R.,Papon A.M.,Jaussaud C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

2. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

3. IEDM Tech. Dig., Loz;Baliga,1986

4. Optimum semiconductors for high-power electronics

5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atmospheric pressure chemical vapor deposition;Journal of Materials Research;2012-08-09

2. Surface Roughness Control of 3C-SiC Films during the Epitaxial Growth Process;Journal of The Electrochemical Society;2004

3. Silicon carbide for microelectromechanical systems;International Materials Reviews;2000-03

4. Improvements in Pt-based Schottky contacts to 3C–SiC;Materials Science and Engineering: B;1999-07

5. Self organization of nitride quantum dots by molecular beam epitaxy;Materials Science and Engineering: B;1999-05

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