High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98282
Reference10 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
3. Theoretical and Empirical Studies of Impurity Incorporation into β ‐ SiC Thin Films during Epitaxial Growth
4. Schottky barrier diodes on 3C‐SiC
5. Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors inn‐type β‐SiC grown via chemical vapor deposition
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