Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors inn‐type β‐SiC grown via chemical vapor deposition-Reference-Cited by-同舟云学术

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Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors inn‐type β‐SiC grown via chemical vapor deposition

Published:1987-08-10 Issue:6 Volume:51 Page:442-444
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kong H. S.,Palmour J. W.,Glass J. T.,Davis R. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98416

Reference10 articles.

1. Saturated electron drift velocity in 6H silicon carbide

2. Thermal conductivity and electrical properties of 6Hsilicon carbide

3. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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