Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC-Reference-Cited by-同舟云学术

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Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC

Published:2020-10-28 Issue:16 Volume:128 Page:165901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chakravorty Anusmita¹^ORCID,Singh Budhi¹,Jatav Hemant¹,Ojha Sunil¹,Singh Jaspreet²^ORCID,Kanjilal D.¹,Kabiraj D.¹^ORCID

Affiliation:

1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India

2. Bhabha Atomic Research Centre, Mumbai 400085, India

Funder

Board of Research in Nuclear Sciences

Council of Scientific and Industrial Research, India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025944

Reference93 articles.

1. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

2. Electrical properties of ion‐implantedp‐njunction diodes in β‐SiC

3. Optimum semiconductors for high-power electronics

4. Critical Issues for MOS Based Power Devices in 4H-SiC

5. Recent Advances in (0001) 4H-SiC MOS Device Technology

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1. Coupled effects of electronic and nuclear energy deposition in UO2 crystals: A high-resolution XRD study carried out at the MARS beamline of the SOLEIL synchrotron facility;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-12

2. Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery;Applied Surface Science;2024-08

3. Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC;Journal of Applied Physics;2024-07-17

4. An ultra high-endurance memristor using back-end-of-line amorphous SiC;Scientific Reports;2024-06-18

5. Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC;Materials;2024-06-11

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