Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Tohoku University
Publisher
Korean Ceramic Society
Subject
Ceramics and Composites
Link
http://jkcs.or.kr/upload/pdf/jkcs-53-6-647.pdf
Reference25 articles.
1. Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane
2. SiC sensors: a review
3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
4. Advances in silicon carbide science and technology at the micro- and nanoscales
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