Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD-Reference-Cited by-同舟云学术

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD

Published:2014-06 Issue: Volume:616 Page:227-231
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Han Ming Xu¹,Zhou Wei²,Zheng Ding Heng²,Tu Rong²,Zhang Song²,Goto Takashi¹

Affiliation:

1. Tohoku University

2. Wuhan University of Technology

Abstract

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h−1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.616.227.pdf

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