Effect of Pressure on Microstructure of <111>-Oriented β-SiC Films: Research via Electron Backscatter Diffraction-Reference-Cited by-同舟云学术

Effect of Pressure on Microstructure of <111>-Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Published:2015-08-28 Issue:12 Volume:98 Page:3713-3718
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Zhang Song¹,Xu Qingfang¹,Sun Qingyun¹,Zhu Peipei¹,Tu Rong¹,Hu Zhiying¹,Han Mingxu²,Goto Takashi²,Zhang Lianmeng¹,Yan Jiasheng³,Li Shusen³

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; 122 Luoshi Road Wuhan 430070 China

2. Institute for Materials Research; Tohoku University; 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan

3. Tech Semiconductors, LTD.; No.162 Shengli Street Xiangfan 441021 China

Funder

National Natural Science Foundation of China

111 Project

International Science & Technology Cooperation Program of China

Natural Science Foundation of Hubei Province, China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13823/fullpdf

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5. Characterization of MOVPE InN Films Grown on 3c-SiC/Si(111) Templates;Cho;Physica Status Solidi (C),2007

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