Low-temperature growth of high quality AlN films on carbon face 6H-SiC
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference14 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
4. Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD
5. High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
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1. Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate;Philosophical Magazine;2019-04-08
2. High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-10-23
3. Design and fabrication of an surface acoustic wave resonator based on AlN/4H-SiC material for harsh environments;Journal of Zhejiang University-SCIENCE A;2017-01
4. Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition;Journal of the Korean Ceramic Society;2016-11-30
5. Growth of InAlN/GaN Heterostructures by Pulsed MOCVD;Nitride Wide Bandgap Semiconductor Material and Electronic Devices;2016-10-14
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