Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization-Reference-Cited by-同舟云学术

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Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Published:2001-05 Issue:2-4 Volume:225 Page:134-140
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davis Robert F.,Gehrke T.,Linthicum K.J.,Zheleva T.S.,Preble E.A.,Rajagopal P.,Zorman C.A.,Mehregany M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

2. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

3. Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

4. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy

5. Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

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