Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference21 articles.
1. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
3. Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes
4. Temperature-dependence of the internal efficiency droop in GaN-based diodes
5. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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1. Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs;Applied Physics Letters;2023-09-11
2. Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells;Optics Express;2023-04-26
3. III-N optoelectronic devices: understanding the physics of electro-optical degradation;Light-Emitting Devices, Materials, and Applications XXVII;2023-03-14
4. Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress;Microelectronics Reliability;2022-11
5. Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE;Crystal Growth & Design;2022-08-04
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