Temperature-dependence of the internal efficiency droop in GaN-based diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658031
Reference14 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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3. On the importance of radiative and Auger losses in GaN-based quantum wells
4. A numerical study of Auger recombination in bulk InGaN
5. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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