A numerical study of Auger recombination in bulk InGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3525605
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1. Efficiency droop in nitride-based light-emitting diodes
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3. Origin of efficiency droop in GaN-based light-emitting diodes
4. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
5. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
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