Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3081059
Reference8 articles.
1. Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips
2. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
3. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
4. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
5. Origin of efficiency droop in GaN-based light-emitting diodes
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