Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=4/a=041101/pdf
Reference23 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Electric field dependence of optical absorption near the band gap of quantum-well structures
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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