III-N optoelectronic devices: understanding the physics of electro-optical degradation-Reference-Cited by-同舟云学术

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III-N optoelectronic devices: understanding the physics of electro-optical degradation

Published:2023-03-14 Issue: Volume: Page:
ISSN:
Container-title:Light-Emitting Devices, Materials, and Applications XXVII
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Author:

Meneghini Matteo,Roccato Nicola,Piva Francesco,De Santi Carlo,Buffolo Matteo,Haller Camille,Carlin Jean-Francois,Grandjean Nicolas,Tibaldi Alberto,Bertazzi Francesco,Goano Michele,Verzellesi Giovanni,Wernicke Tim,Kneissl Michael,Meneghesso Gaudenzio,Zanoni Enrico

Publisher

SPIE

Reference33 articles.

1. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

2. An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

3. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

4. Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

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