Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE-Reference-Cited by-同舟云学术

Etching of the SiGa_xN_y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

Published:2022-08-04 Issue:9 Volume:22 Page:5206-5214
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bosch Julien¹^ORCID,Coulon Pierre-Marie¹,Chenot Sébastien¹,Portail Marc¹,Durand Christophe²^ORCID,Tchernycheva Maria³^ORCID,Shields Philip A.⁴^ORCID,Zúñiga-Pérez Jesús¹⁵,Alloing Blandine¹

Affiliation:

1. CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France

2. University Grenoble Alpes, CEA, Grenoble-INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France

3. Centre de Nanosciences et de Nanotechnologies (C2N), University Paris-Saclay, Boulevard Thomas Gobert, 91120 Palaiseau, France

4. University of Bath, Claverton Down, Bath BA2 7AY, U.K.

5. MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 117543, Singapore

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00286

Reference64 articles.

1. Review of recent progress of III-nitride nanowire lasers

2. Single gallium nitride nanowire lasers

3. GaN based nanorods for solid state lighting

4. InGaN/GaN nanorod array white light-emitting diode

5. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Complications in silane-assisted GaN nanowire growth;Nanoscale Advances;2023