Complications in silane-assisted GaN nanowire growth-Reference-Cited by-同舟云学术

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Complications in silane-assisted GaN nanowire growth

Published:2023 Issue:9 Volume:5 Page:2610-2620
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Jiang Nian¹²^ORCID,Ghosh Saptarsi²^ORCID,Frentrup Martin²,Fairclough Simon M.²,Loeto Kagiso²,Kusch Gunnar²^ORCID,Oliver Rachel A.²,Joyce Hannah J.¹^ORCID

Affiliation:

1. Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK

Abstract

Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential.

Funder

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00939K

Reference55 articles.

1. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

2. Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

3. Deep UV Emission from Highly Ordered AlGaN/AlN Core–Shell Nanorods

4. Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

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