Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Abstract

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.