Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes-Reference-Cited by-同舟云学术

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes

Published:2015-07-27 Issue:16 Volume:23 Page:20340
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lee Keon Hwa,Park Hyun Jung,Kim Seung Hwan,Asadirad Mojtaba,Moon Yong-Tae,Kwak Joon Seop,Ryou Jae-Hyun

Funder

National Research Foundation of Korea (NRF)

Texas Center for Superconductivity at UH (TcSUH)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

2. Advances in group III-nitride-based deep UV light-emitting diode technology

3. 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles

4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

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