Examining Degradation Mechanisms in Strain-Relaxed AlGaN-Based UV-C Light-Emitting Diodes Using Raman Spectroscopy-Reference-Cited by-同舟云学术

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Examining Degradation Mechanisms in Strain-Relaxed AlGaN-Based UV-C Light-Emitting Diodes Using Raman Spectroscopy

Published:2024-09 Issue:9 Volume:45 Page:1574-1577
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gong Honglin¹^ORCID,Yang Renlong¹^ORCID,Zhang Renzhu¹^ORCID,Shen Chuhui¹,Guo Weijie¹^ORCID,Chen Huanting²^ORCID,Chen Zhong¹^ORCID,Lu Yijun¹^ORCID,Zhu Lihong¹^ORCID

Affiliation:

1. Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, China

2. Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province, School of Physics and Information Engineering, Minnan Normal University, Zhangzhou, China

Funder

National Natural Science Foundation of China

Major Science and Technology Project of Fujian Province

Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587313.pdf?arnumber=10587313

Reference36 articles.

1. III-Nitride Ultraviolet Emitters

2. Advances and prospects in nitrides based light-emitting-diodes

3. AlGaN photonics: recent advances in materials and ultraviolet devices

4. Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs

5. Investigation of optical polarization characteristics of ultraviolet-C AlGaN multiple quantum wells by angle-resolved cathodoluminescence

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