Quantum-confined photoluminescence from Ge_1−xSn_x/Ge superlattices on Ge-buffered Si(001) substrates
Author:
Funder
National Science Council of Republic of China
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
2. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
3. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
4. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
5. Interband Transitions inSnxGe1−xAlloys
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3. Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices;RSC Advances;2022
4. Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells;Physical Review Materials;2020-02-19
5. Electrically Injected GeSn Vertical-Cavity Surface Emitters on Silicon-on-Insulator Platforms;ACS Photonics;2019-06-12
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