Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices-Reference-Cited by-同舟云学术

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

Published:2022 Issue:38 Volume:12 Page:24518-24554
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nawwar Mohamed A.¹^ORCID,Abo Ghazala Magdy S.¹,Sharaf El-Deen Lobna M.¹,Kashyout Abd El-hady B.²

Affiliation:

1. Physics Department, Faculty of Science, Menoufia University, Shebin El-Koom, Menoufia, Egypt

2. Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria, Egypt

Abstract

Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA04181B

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