Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors <i>via</i> arsenic incorporation-Reference-Cited by-同舟云学术

Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation

Published:2023 Issue:14 Volume:13 Page:9154-9167
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nawwar Mohamed A.¹^ORCID,Abo Ghazala Magdy S.¹,Sharaf El-Deen Lobna M.¹,Anis Badawi²,El-Shaer Abdelhamid³,Elseman Ahmed Mourtada⁴^ORCID,Rashad Mohamed M.⁴^ORCID,Kashyout Abd El-hady B.⁵

Affiliation:

1. Physics Department, Faculty of Science, Menoufia University, Shebin El-Koom, Menoufia, 32511, Egypt

2. Spectroscopy Department, Physics Research Institute, National Research Centre, 33 El Bohouth St., Dokki, 12622, Giza, Egypt

3. Physics Department, Faculty of Science, Kafrelsheikh University, KafrelSheikh, 33516, Egypt

4. Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria, 21943, Egypt

5. Electronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI), 11421, Helwan-Cairo, Egypt

Abstract

Metal induced crystallization (MIC), strained Ge doped with Sn and As, p–i–n photodetectors, tuned direct transitions, spectral responsivity.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA00805C

Reference58 articles.

1. High-responsivity graphene/silicon-heterostructure waveguide photodetectors

2. A review of photodetectors for sensing light-emitting reporters in biological systems

3. Advances in SiGeSn/Ge Technology