Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference13 articles.
1. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
2. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
3. Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength
4. Theoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser
5. Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions
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2. Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers;Journal of Vacuum Science & Technology B;2024-04-17
3. Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate;Crystals;2024-01-28
4. Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission;Scientific Reports;2023-10-28
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