Theoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3329424
Reference11 articles.
1. Electronic Structure and Optical Properties of Semiconductors
2. Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers
3. Optical and structural properties of SixSnyGe1−x−y alloys
4. Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures
5. Comparison of electronic band structure and optical transparency conditions ofInxGa1−xAs1−yNy∕GaAsquantum wells calculated by 10-band, 8-band, and 6-bandk∙pmodels
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