Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1606104
Reference11 articles.
1. Electronic properties of metastableGexSn1−xalloys
2. Band structure and instability of Ge1−xSnx alloys
3. Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy
4. Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys
5. Interband Transitions inSnxGe1−xAlloys
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