Synthesis of High Sn Content Ge1–x–ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications-Reference-Cited by-同舟云学术

Synthesis of High Sn Content Ge_1–x–ySi_xSn_y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

Published:2023-10-06 Issue:41 Volume:15 Page:48382-48394
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kouvetakis John¹^ORCID,Wallace Patrick M.¹,Xu Chi²^ORCID,Ringwala Dhruve A.¹^ORCID,Mircovich Matthew²^ORCID,Roldan Manuel A.³,Webster Preston T.⁴,Grant Perry C.⁴,Menéndez José²^ORCID

Affiliation:

1. School of Molecular Science, Arizona State University, Tempe, Arizona 85287-1604, United States

2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, United States

3. Eyring Materials Center Arizona State University, Tempe, Arizona 85287-1504, United States

4. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117, United States

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c10230

Reference40 articles.

1. Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers

2. Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

3. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

4. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

5. Si–Ge–Sn alloys: From growth to applications

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