Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101152
Reference9 articles.
1. Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization
2. Electronic properties of metastableGexSn1−xalloys
3. Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates
4. The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy
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