High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer-Reference-Cited by-同舟云学术

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High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer

Published:2018-02-20 Issue:5 Volume:26 Page:5111
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Oh Jeong-Tak,Moon Yong-Tae,Kang Dae-Sung,Park Chan-Keun,Han Jae-Woong,Jung Myung-Hoon,Sung Youn-Joon,Jeong Hwan-Hee,Song June-O,Seong Tae-Yeon

Funder

LG Innotek Co., Ltd.

National Research Foundation of Korea (NRF)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. Nitride-based semiconductors for blue and green light-emitting devices

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1. A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications;Photonics;2024-05-22

2. Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer;Materials;2023-12-28

3. Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network;Journal of the Australian Ceramic Society;2023-06-22

4. The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate;Materials;2023-01-27

5. Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing;ACS Photonics;2023-01-24

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