Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes-Reference-Cited by-同舟云学术

Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

Published:2002-02 Issue:1-4 Volume:235 Page:177-182
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang T,Liu Y.H,Lee Y.B,Izumi Y,Ao J.P,Bai J,Li H.D,Sakai S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. AlGaN/GaN quantum well ultraviolet light emitting diodes

2. T. Nishida, H. Saito, N. Kobayashi, Extended Abstracts of the 48th Spring Meeting of the Japan Society of Applied Physics and Related Societies. Tokyo, March 28–31/2001, p. 367.

3. M. Iwaya, et al., Extended Abstracts of the 48th Spring Meeting of the Japan Society of Applied Physics and Related Societies. Tokyo, March 28–31/2001, p. 366.

4. Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

5. The news from Compound semiconductors 7(2) (2001) 21.

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