Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions-Reference-Cited by-同舟云学术

Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

Published:2023-02-20 Issue:8 Volume:122 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Dominic Merwin Xavier Agnes Maneesha¹^ORCID,Ghosh Arnob¹^ORCID,Rahman Sheikh Ifatur¹^ORCID,Allerman Andrew²,Arafin Shamsul¹^ORCID,Rajan Siddharth¹³

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USA

2. Sandia National Laboratories 3 , Albuquerque, New Mexico 87185, USA

3. Department of Materials Science and Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USA

Abstract

Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0122919/16715583/081108_1_online.pdf

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