Author:
Tüzemen Ebru Şenadım,Yüksek Ahmet Gürkan,Demir İlkay,Horoz Sabit,Altuntaş İsmail
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Ceramics and Composites
Reference51 articles.
1. Bryan, I., et al.: Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. Appl. Phys. Lett. 112(6), 062102 (2018)
2. Buzynin, Y.N., et al.: InN layers grown by MOCVD on a-plane Al2O3. Physica Status Solidi (a) 215(11), 1700919 (2018)
3. Genç, M., et al.: Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs. Superlattices Microstruct. 128, 9–13 (2019)
4. O’leary, S.K., et al.: Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review. J. Mater. Sci.: Mater. Electron. 17(2), 87–126 (2006)
5. Garg, M., et al.: Giant UV photoresponse of GaN-based photodetectors by surface modification using phenol-functionalized porphyrin organic molecules. ACS Appl. Mater. Interfaces. 11(12), 12017–12026 (2019)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献